PART |
Description |
Maker |
SY58021UMITR SY58021U_07 SY58021U SY58021UMG SY580 |
4GHz, 1:4 LVPECL FANOUT BUFFER/ TRANSLATOR WITH INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
SY58021U10 SY58021UMG SY58021UMGTR SY58021UMI SY58 |
4GHz, 1:4 LVPECL Fanout Buffer/Translator with Internal Termination Precision Edge
|
Micrel Semiconductor
|
MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V5964_04 MGFC41V5964 MGFC41V596404 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET 5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V5258_04 MGFC40V5258 MGFC40V525804 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V4450A C404450A |
From old datasheet system 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|